TRAN.MOSFET CANAL N SUD50N06-07L 60V 96A

Type Designator: SUD50N06-07LType of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 136 W

Maximum Drain-Source Voltage -Vds-: 60 V

Maximum Gate-Source Voltage -Vgs-: 20 V

Maximum Gate-Threshold Voltage -Vgs(th)-: 3 V

Maximum Drain Current -Id-: 96 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 96 nC

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 450 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0074 Ohm

Package: TO-252