TRANSISTOR IGBT CANAL N 600V 30A K30N60

IGBT with built in diode.

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Features : .....  K30N60.pdf

- 75% lower Eoff compared to previous generation combined with low conduction losses
- Short circuit withstand time – 10 s Designed for: - Motor controls - Inverter
- NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
- Very soft, fast recovery anti-parallel Emitter Controlled Diode Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC1 for target applications.